
American Journal of Applied Sciences
ISSN 1546-9239 (print)eISSN 1554-3641 (online) Open access
Research Article · Open access · Published 30 September 2009
Model of High-Temperature Diffusion of Interstitial Silicon Atoms in Silicon
M. Jadan, A. R. Chelyadinskii, V. Yu. YavidSince publication
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Citing articles (4)
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- doi:10.1039/d1cc04100bFound 17 September 2021
- doi:10.1016/j.solmat.2015.05.024Found 12 June 2020
- doi:10.1149/2.014202jesFound 12 June 2020
- doi:10.7567/jjap.54.096502Found 12 June 2020