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B. S. Panwar

Center for Applied Research in Electronics, Indian Institute of Technology Delhi Hauz-Khas, New-Delhi-110016, India
1 article in our journals

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Research ArticleOpen accessStudy of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar TransistorG. M. Khanduri, B. S. PanwarThe cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT) at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator. A conventional NPN Si/SiGe/Si Double-heterojunction bipolar transistor (SiGe DHBT) having uniform 14%Ge in the base region has been investigated for comparison. The analysis shows the formation of a retarding potential barrier for minority … …American Journal of Applied Sciences, Vol. 1, Issue 3 · 30 Sep 2004 · 6,891 accessesView PDFCite