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Author

A. V. Govorkov

Institute of Rare Metals, Moscow, Russia
1 article in our journals

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Research ArticleOpen accessDEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONSA. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al.Decreasing the residual donors density and deep traps spectra densities in undoped GaN films grown by Hydride Vapor Phase Epitaxy (HVPE) is very important for promoting the use of such material in high-voltage/high-power rectifiers, radiation detectors. In this study we studied the effects of changing the growth temperature of undoped HVPE GaN films on these properties. The two groups of … …American Journal of Applied Sciences, Vol. 11, Issue 9 · 30 Sep 2014 · 6,901 accessesView PDFCite