5 articles for “Gate Oxide”

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Research ArticleOpen accessPhrase in the titleAdaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide ThicknessB. Gopi, R. S.D. WahidabanuProblem statement: Since the advent of IC and VLSI technology, the demand for high-speed devices and equipment is growing very rapidly. Every individual researcher is marching towards the dream of achieving it. The role of a design engineer is becoming more challenging. As per Moore’s law, the packing density doubles every eighteen months. This is possible only by scaling down … …Journal of Computer Science, Vol. 8, Issue 4 · 1 Feb 2012 · 7,103 accessesView PDF Cite

Research ArticleOpen accessEvery word in the titleCHARACTERISTIC ANALYSIS OF DUAL GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR BY MATHEMATICAL MODELINGC.A. Abdul Nazar, V. KannanIn this study, the characteristics of DGMOSFET were obtained using mathematical modeling. The variations of characteristics were analyzed with different conditions into consideration. Different parameters behavior is analyzed, such as Transcapacitance variation with the gate voltage, threshold voltage variation with respect to lateral straggle parameter and temperature, mobile charge density variation is also analyzed and also the drain characteristics of … …American Journal of Applied Sciences, Vol. 11, Issue 8 · 5 May 2014 · 6,618 accessesView PDF Cite

Research ArticleOpen accessIn the keywordsGate Replacement Technique for Reducing Leakage Current in Wallace Tree MultiplierNaveen Raman, ThanushkodiLeakage power has become more significant in the power dissipation of today’s CMOS circuits. This affects the portable battery operated devices directly. The multipliers are the main key for designing an energy efficient processor, where the multiplier design decides the digital signal processors efficiency. In this study gate replacement technique is used to reduce the leakage power in 4×4 Wallace … …Journal of Computer Science, Vol. 9, Issue 2 · 30 Mar 2013 · 6,763 accessesView PDF Cite

Research ArticleOpen accessIn the abstractUltra Low Power Single Edge Triggered Delay Flip Flop Based Shift Registers Using 10-Nanometer Carbon Nano Tube Field Effect TransistorRavi Thiyagarajan, Kannan VeerappanCarbon Nano Tube Field Effect Transistor is currently considered as promising successor of Metal Oxide Semiconductor Field Effect Transistor. The scaling down of the Metal Oxide Semiconductor device faced serious limits like short channel effect, tunnelling through gate oxide layer, associated leakage currents and power dissipation when its dimension shrink down to 22 nanometer range. Further scaling of Metal Oxide … …American Journal of Applied Sciences, Vol. 10, Issue 12 · 14 Oct 2013 · 6,749 accessesView PDF Cite

Research ArticleOpen accessIn the abstractKnowledge Representation of Ion-Sensitive Field-Effect Transistor Voltage Response for Potassium Ion Concentration Detection in Mixed Potassium/Ammonium Ion SolutionsWan Fazlida Hanim Abdullah, Mohd Alaudin Mohd Ali, Md Shabiul Islam, Masuri OthmanProblem statement: The Ion-Sensitive Field-Effect Transistor (ISFET) is a metal-oxide field-effect transistor-based sensor that reacts to ionic activity at the electrolye/membrane/gate interface. The ionic sensor faces issue of selectivity from interfering ions that contribute to the sensor electrical response in mixed solutions. Approach: We present the training data collection of ISFET voltage response for the purpose of post-processing stage neural … …American Journal of Applied Sciences, Vol. 7, Issue 1 · 31 Jan 2010 · 7,816 accessesView PDF Cite