Research ArticleOpen accessIn the author namesDFM of Strained-Engineered MOSFETs Using Technology CADT. K. Maiti, C. K. MaitiProblem statement: In this study, a systematic study based on Technology CAD (TCAD) was taken up for the design and Virtual Wafer Fabrication (VWF) of strain-engineered MOSFETs in Si CMOS technology. Approach: A simple manufacturable process recipe was developed to induce uniaxial stress in channel region to obtain enhanced performance in CMOS in 45 nm technology node. Results: Using Synopsys … …American Journal of Engineering and Applied Sciences, Vol. 3, Issue 4 · 5 Nov 2010 · 7,661 accessesView PDFCite
Research ArticleOpen accessIn the abstractOn Application of Carhart Atom Pairs to Predict Anticonvulsant ActivityAlan Talevi, Julian J. Prieto, Luis E. Bruno-Blanch, Eduardo CastroAbout 50 million people in the world suffer from epilepsy, especially in childhood, adolescence and old age. Available treatment fails to control epilepsy in up to 30% of affected people. In developing countries, however, the amount of patients that do not receive adequate treatment climbs up to 75%. Moreover, the new generation of antiepileptic drugs (AEDs) causes important central and … …American Journal of Biochemistry and Biotechnology, Vol. 2, Issue 3 · 30 Sep 2006 · 6,857 accessesView PDFCite