2 articles for “ALE technique”

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Research ArticleOpen accessIn the keywordsAtomic Layer Epitaxial Growth of Gaas on Porous Silicon SubstrateMohamed Lajnef, Afrah Bardaoui, Isabelle Sagne et al.GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to … …American Journal of Applied Sciences, Vol. 5, Issue 5 · 31 May 2008 · 7,027 accessesView PDF Cite

Research ArticleOpen accessIn the abstractPrediction of Residual Axial Load Carrying Capacity of Reinforced Concrete (RC) Columns Subjected to Extreme Dynamic LoadsMasoud Abedini, Azrul A. Mutalib, Sudharshan N. Raman et al.The evaluation of residual axial load carrying capacity of Reinforced Concrete (RC) columns to explosion load is significant for protection of buildings. The few investigations conducted on residual axial load carrying capacity of RC columns when subjected to blast loads. Therefore, the overall aim of this research is to generate equations on the blast capacity of axially and uniaxial loaded … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 2 · 5 May 2017 · 8,099 accessesView PDF Cite