Research ArticleOpen accessAll words, across the recordMinimization of ℓ2-Norm of the KSOR OperatorA. I. Alzaki, I. K. YoussefWe consider the problem of minimizing the ℓ2-norm of the KSOR operator when solving a linear systems of the form AX = b where, A = I +B (TJ = -B, is the Jacobi iteration matrix), B is skew symmetric matrix. Based on the eigenvalue functional relations given for the KSOR method, we find optimal values of the relaxation parameter … …Journal of Mathematics and Statistics, Vol. 8, Issue 4 · 8 Jan 2013 · 7,083 accessesView PDFCite
Research ArticleOpen accessAll words, across the recordOn the Successive Overrelaxation MethodI. K. YoussefProblem statement: A new variant of the Successive Overrelaxation (SOR) method for solving linear algebraic systems, the KSOR method was introduced. The treatment depends on the assumption that the current component can be used simultaneously in the evaluation in addition to the use the most recent calculated components as in the SOR method. Approach: Using the hidden explicit characterization of … …Journal of Mathematics and Statistics, Vol. 8, Issue 2 · 22 Feb 2012 · 12,799 accessesView PDFCite
Research ArticleOpen accessAll words, across the recordA Comparative Study of Block Preconditioners for Incompressible Flow ProblemsJia LiuProblem statement: We consider the numerical solvers for the linearized Navier-Stokes problem. Both the Stokes problem and Oseen problems are considered. Approach: We used the Mark and Cell (MAC) discretization method to discretize the Navier-Stokes equations. We used preconditioned Krylov subspace methods to solve the resulting linear systems. Results: Numerical experimental results are performed to compare the different preconditioners. Conclusion: … …Journal of Mathematics and Statistics, Vol. 7, Issue 4 · 14 Sep 2011 · 7,063 accessesView PDFCite
Research ArticleOpen accessAll words, across the recordIterative Numerical Method of Gate Turn-Off Thyristor: Comparative Study Between Si and SiCS. M. Zahim, M. Norainon, J. M. Shawal, R. I.R.M. TaufikaProblem statement: Silicon (Si) has long been the dominant semiconductor of choice for high-power, high-temperature and high-frequency device applications. However, recently, wide bandgap semiconductors, particularly Silicon Carbide (SiC) has attracted because it offers tremendous benefits over other semiconductor materials in a large number of industrial and military. A change of technology from Si to SiC will revolutionize the power electronics … …American Journal of Engineering and Applied Sciences, Vol. 2, Issue 2 · 30 Jun 2009 · 8,123 accessesView PDFCite