Research ArticleOpen accessIn the abstractIterative Numerical Method of Gate Turn-Off Thyristor: Comparative Study Between Si and SiCS. M. Zahim, M. Norainon, J. M. Shawal, R. I.R.M. TaufikaProblem statement: Silicon (Si) has long been the dominant semiconductor of choice for high-power, high-temperature and high-frequency device applications. However, recently, wide bandgap semiconductors, particularly Silicon Carbide (SiC) has attracted because it offers tremendous benefits over other semiconductor materials in a large number of industrial and military. A change of technology from Si to SiC will revolutionize the power electronics … …American Journal of Engineering and Applied Sciences, Vol. 2, Issue 2 · 30 Jun 2009 · 8,128 accessesView PDFCite
Research ArticleOpen accessIn the abstractWinner-Take-All Neural Network with Massively Optoelectronic InterconnectionsWissam H. Ali, Ahmed N. Abdalla, Wa'l H. AliThe increased interconnection density, bandwidth, nonlocality and fan-out-fan-in offered by optics over conventional electronic technologies make it a very attractive medium for a variety of application particularity in the field of communication system implementation for all types of computing engines is achieved. This is especially true for neural networks in which the demand for communication resources is extremely high. In … …American Journal of Applied Sciences, Vol. 6, Issue 2 · 28 Feb 2009 · 7,441 accessesView PDFCite