p-n Junction of 1.95 nm Carbon Nanotube: Fabrication, Properties and Performance

Carbon Nanotube (CNT) is the substitution of silicon material for designing of transistor device due to the shortcoming of silicon properties. In this study, 1.95 nm diameter of CNT is fabricated and characterized by analyzing of depletion width and I-V characteristics by realizing the p-n junction behavior. The p-n junction behavior of carbon nanotube is realized by applying self-consistency of the electrostatic potential and charge of CNT. The result shows that the variation of doping concentration happens in p-n junction due to the different cylindrical size of the carbon nanotube. Finally, the p-n junction current voltage transfer characteristics shows low current required for CNT device.