Modeling of Signal Generation Function and Electron Penetration Effects on the EBIC Signal of Schottky diodes of Ge

The present study shows that simple forms for the generation functions, if connected to appropriate electronic path (electron range), can be successfully used to describe the collection efficiency in EBIC devices. Both uniform and point-like source generation functions are considered here and for which two phenomenological electronic paths, depending on the incident beam energy, are obtained. Complexities that might arise solving the continuity equations are, thus, avoided. The calculations were performed for the Schottky diodes Au/Ge.